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| Excelics PRELIMINARY DATA SHEET EIA1616-4P 16.2-16.4GHz, 4W Internally Matched Power FET * * * * * 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1616-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=16.2-16.4GHz MIN 35 6 TYP 36 7 25 1760 f=16.2-16.4GHz 2200 2880 3000 -1.0 -13 -15 4.5 o MAX UNIT dBm dB % mA dBm P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=48mA 3400 mA mS -2.5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com |
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